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| Production Process InGaP HBT Foundry Service Features Metal 2 - 4um TQHBT3 * * * * * MIM Metal 0 Isolation Implant Dielectric Metal 1 - 2um Dielectric E B C Emitter Metal 1 - 2um B C NiCr Base Collector * * * Sub Collector Buffer & Substrate * TQHBT3 Process Cross-Section * General Description TriQuint's new TQHBT3 process is a highly reliable InGaP HBT process with three levels of interconnecting metal and state-of-the-art device performance. Thick metal interconnects and high quality passives promote integration. The thick metal interconnects, which promote enhanced thermal management, and high density capacitors keep die sizes small. MOCVD epitaxial processes are utilized to grow the active layers. A carbon-doped Base and InGaP Emitter are utilized for high RF performance consistent with high reliability. Designs utilizing the 3-um emitter width have the performance of previous 2-um emitters, but with the reliability and ruggedness associated with wider emitters. Precision NiCr resistors and high value MIM capacitors are included. The three metal layers are encapsulated in a high performance dielectric that allows wiring flexibility and plastic packaging simplicity. * * * * * * 2- and 3-um emitter widths >22 dB MAG @ 6 GHz; with 3-um emitters Amplifier Ruggedness: VSWR 70:1 @ 5 V supply High Linearity in PA applications InGaP Emitter Process for High Reliability and Thermal Stability Base Etch Stop for Uniformity MOCVD Epitaxy High Density Interconnects; * 2 Global, 1 Local * Over 6 m Total Thickness * Dielectric Encapsulated Metals Thick Metal Interconnects: * Enhanced Thermal Management * Minimum Die Size Effective Base Ballasting for Maximum Gain 150 mm Wafers High-Q Passives NiCr Thin Film Resistors High Value Capacitors & Stacked Capacitors Backside Vias Optional Validated Models and Design Support Applications * * * Power Amplifiers Driver Amplifiers Wideband, General Purpose Amplifiers TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page 1 of 6; Rev 1.1 2/8/2005 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com Production Process InGaP HBT Foundry Service TQHBT3 TQHBT3 Process Details TQHBT3 Process Details Element HBT Transistor Parameter Emitter Periphery (Standard Cell) Value 3 x 3 x 30 Units m 2um emitters are also available! Vbe Beta Ft Fmax BVcbo BVbeo BVceo Interconnect MIM Caps (Top Stacked Cap) Bottom Stacked Cap Inductors Resistors Metal Layers Value Value Q @ 2 GHz NiCr Bulk Vias Mask Layers Yes No Vias With Vias 14 16 1.15 130 40 65 24 7 14 3 1200 625 >20 50 350 Ohms/sq Ohms/sq pF/mm2 pF/mm2 GHz GHz V V V V Maximum Ratings HBT Storage Temperature Range HBT Operating Junction Temperature Range Junction Current Denstity MIM Capacitor -65 to +150 -55 to +150 20 20 Deg C Deg C kA/cm^2 V TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page 2 of 6; Rev 1.1 2/8/2005 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com Production Process InGaP HBT Foundry Service 0.1 TQHBT3 TQHBT3 DC I--V Plot 0.08 Device size: 3X3X30 Ib=0.7uA to Ib=600uA, step size=67uA 0.06 Ic (A ) 0.04 0.02 0 0 2 4 6 8 Vce (V) Ft, Fmax vs Ic @Vce=3.5V Frequency (GHz) 80 70 60 50 40 30 20 10 0 0.00E +00 Ft Fmax 5.00E -02 1.00E -01 1.50E -01 2.00E -01 2.50E -01 3.00E -01 Ic (m /um A ^2) TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page 3 of 6; Rev 1.1 2/8/2005 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com Production Process InGaP HBT Foundry Service TQHBT3 Gain at 6.1 GHz Versus Current Density 25 23 21 19 Gain (dB) 17 15 13 11 9 7 5 0 10 20 30 40 50 3x3x30 3x3x45 Ic (kA/cm2) Gummel Plot of TQHBT3 Gummel Plot (Ic vs Vbe) 0.1 0.01 Device size:3X3X30 0.001 Ic (A) 0.0001 1E-005 1E-006 1E-007 1 1.1 1.2 1.3 1.4 Vbe(V) TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page 4 of 6; Rev 1.1 2/8/2005 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com Production Process InGaP HBT Foundry Service Gain, Pout, PAE vs Pin TQHBT3 CW @ 1.9 GHz 25 80 20 60 Gain(dB), Pout(dBm) 15 10 40 5 PAE(%) 20 0 Pout(dBm) Gain (dB) -5 -20 -15 -10 -5 0 0 5 Pin (dBm) Device size: 3X3X30 Freq=1.9GHz Vce=3.4V, Ic=3.3mA Load Gamma @ 1.9GHz = 0.43<24.7 Source Gamma @ 1.9GHz = 0.62<164.7 Load Gamma @ 3.8GHz = 0.59<-171.6 Source Gamma @ 3.8GHz = 0.71<17.1 TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page 5 of 6; Rev 1.1 2/8/2005 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com PAE(%) Production Process InGaP HBT Foundry Service Prototyping and Development Process Qualification Status TQHBT3 * Prototype Development QuickTurn (PDQ): * Shared Mask Set; * Run Monthly * Hot Lot Cycle Time * Via and Non-Via Options * Prototype Wafer Option (PWO): * Customer-specific Masks, Customer Schedule * 2 wafers delivered * With thinning and sawing; optional backside vias * Process based on TQHBT2.5 production process. * Full wafer level, process and packaged part qualification complete for TQHBT3. Contact TriQuint for relevant reports. * For more information on Quality & Reliability, contact TriQuint or visit: www.triquint.com/manufacturing/QR/ * Design Manual * Device Library of Circuit Elements: Transistors, Diodes, Thin Film Resistors, Capacitors, Inductors * Parameters for 2nd-generation, TriQuint-Modified GummelPoon Model Available Now * Agilent ADS & AWR MWO * Process Variation Models available now * Layout Files Available for: * ICED & Cadence * Layout Rule Sets for Design Rule & Layout versus Schematic Check Available: * ICED & Cadence * Qualified Package Models for Supported Package Styles Design Tool Status * * * * * * * * * Tiling of GDSII Stream Files including PCM Design Rule Check Services Layout versus Schematic Check Services Packaging Development Engineering Test Development Engineering: * On-Wafer * Packaged Parts Thermal Analysis Engineering Yield Enhancement Engineering Part Qualification Services Failure Analysis Applications Support Services * GaAs Design Classes: * Half Day Introduction; Upon Request * Four Day Technical Training; Fall & Spring at TriQuint Oregon facility * For Training & PDQ Schedules please visit: www.triquint.com/foundry/ Training * * * * * * * * * Mask Making 150 mm Wafer Fab Wafer Thinning Wafer Sawing Substrate Vias DC Die Sort Testing RF On-Wafer Testing Plastic Packaging RF Packaged Part Testing Manufacturing Services Please contact your local TriQuint Semiconductor Representative/ Distributor or Foundry Services Division Marketing for Additional information: E-mail: sales@triquint.com Phone: (503) 615-9331 Fax: (503) 615-8905 TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page 6 of 6; Rev 1.1 2/8/2005 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com |
Price & Availability of TQHBT3
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